| 摘要 |
PURPOSE:To facilitate the miniaturization of the titled device by providing a close contact sensor part by using a photosensitive layer which has transparent or transluscent electrodes on the both side of the sensor part itself. CONSTITUTION:On a glass 1 (thickness: 1.1mm) with a transparent electrically conductive film, p(a-SiCH)/i(a-SiH)/n(a-SiH) is deposited by high-frequency glow discharge method, the ITO transparent electrodes are deposited on the surfaces, and thus a sensor consisting of a PIN diode having the transparent electrodes on both surfaces is produced. On the glass substrate side of the sensor, a semiconductor laser of lambda=780mm and a light condenser 3 are placed, and a black and white original 4 is made closely contact on the ITO side, then the original is scanned with a laser beam, and thus generated photocurrent variation is detected by a photocurrent detector 5 consisting of a photosensor amplifier, and the result is recorded in a wave memory 7 through an interface 6. By reproducing these signals in the memory 7 by a CPU, an original image comes out on a display device (cathoderay tube) in an excellent resolution. For a light source, such an almost single-COLOR light source is used that has photon energy transmitting through the photosensitive layer at more than 30% up to 98%, preferably at 60-85%.
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