| 摘要 |
PURPOSE:To integrate a photodiode with a FET and a bipolar transistor, by forming both of a channel layer of the FET and a collector layer of the bipolar transistor with the same thin film material as a window layer of the photodiode, and by forming a base layer of the bipolar transistor with the same thin layer as a gate layer of the FET. CONSTITUTION:At least three kinds of devices consisting of a photodiode 13, a field effect transistor 14 and a bipolar transistor 15 are formed on the same semiconductor substrate. And, the photodiode 13 comprises at least three layers consisting of a low resistance layer 16, a light absorbing layer 17 and a window layer 18. The field effect transistor 14 comprises at least two layers consisting of a channel layer made of the same thin film material as the window layer 18 and a gate layer 21. Moreover, the bipolar transistor comprises at least four layers consisting of a collector layer made of the same thin film material as both of the low resistance layer 16 and the window layer 18, a base layer 24 made of the same thin film material as the gate layer 21, and an emitter layer 25.
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