| 摘要 |
PURPOSE:To protect a device of this design against damage due to heat developed at a cleavage face by a method wherein a slope of a stripe-like face (100) B, which is parallel to the direction <110>, is provided adjacent to a face (100) of semiconductor substrate and an active layer is formed through an MOCVD method. CONSTITUTION:A mesa-shaped groove with a slope of a stripe-like face (100) B parallel to the direction <110> is provided on the face (100) of an n-type GaAs substrate 1. Next, a lower clad layer 2, an active layer 3, an active layer 3, an upper clad layer 4, a current block layer 5, a buried layer 6, and a contact layer 7 are formed through an MOCVD method at a crystal growth temperature of 650-850 deg.C. And then, the crystal growth is prevented at a bent section 9 of the active layer 3, so that the active layer is separated into two parts, an inner main section and a section adjacent to the cleavage edge face. As the laser rays generated from the main section of the active layer 3 is guided from the projecting end to the clad layer 2 which does not absorb laser rays, the cleavage edge face is protected against damage owing to heat developed at it. And, as the active layer is separated, laser rays are all directed to the clad layer, so that the light emitting efficiency can be improved.
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