| 摘要 |
PURPOSE:To shorten the reaction time of silicification, and to obtain a uniform silicide easily by selectively forming an Si layer onto an insulating film and shaping a second metallic film by electroless plating onto a top face and a side face on the Si layer through a first metallic film having catalytic action. CONSTITUTION:An Si layer 103 is formed selectively onto an insulating film 102 shaped onto a semiconductor substrate 101, and the semiconductor substrate is dipped into a solution containing metallic ions having catalytic action, thus forming a first metallic film 204 having catalytic action onto the top face and side face of an Si layer 203. A second metallic film 205 is shaped onto the top face and side face of the first metallic film 204 through electroless plating. The Si layer 103 such as an Si wiring 103 is formed selectively onto the insulating film 102 such as an inter-layer insulating film 102 consisting of SiO2, etc., on the semiconductor substrate 101 such as an Si substrate 101, and the substrate is dipped into the solution including metallic ions such as Pd, Zn, Sn, etc., thus shaping the first metallic film 204 such as a catalytic metallic film 204. The second metallic film 205 such as a plating film 205 in Ni, etc., is formed through electroless plating, and thermally treated, thus forming an silicide wiring 306.
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