| 摘要 |
PURPOSE:To obtain a device efficiently dry-etching a fine region in a short time by installing a plasma reaction chamber, in which plasma is generated, and a needle electrode concentrating an electric field at the specific position of a substance to be etched in the plasma reaction chamber. CONSTITUTION:A plasma reaction chamber 1, in which plasma is generated, and a needle electrode 3 concentrating an electric field at the specified position of a substance to be etched 6 in the plasma reaction chamber are mounted. The plasma reaction chamber 1 in which plasma is generated, a plate electrode 4 set up outside the plasma reaction chamber 1, the needle electrode 3 concentrating the electric field at the specific position of the substance to be etched 6 set onto a sample base 7 for the plasma reaction chamber 1, and a gonio-stage 2 moving the tip of the needle electrode 3 in three dimensions in the plasma reaction chamber 1 are fitted. The needle electrode 3 is grounded at ground potential, and the needle electrode 3 and the plate electrode 4 are connected to a high-frequency power 8.
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