| 摘要 |
PURPOSE:To eliminate the need for a process, in which an unnecessary section is removed after a plating film is formed, while improving the yield of burying of a contact hole by electroless plating by selectively shaping a catalytic metallic film by projecting beams under the state of dipping into a solution containing metallic ions having catalytic action. CONSTITUTION:The other conductivity type second semiconductor region 103 is shaped brought into contact with one conductivity type first semiconductor region 104 on a semiconductor, substrate, and said first semiconductor region 104 and second semiconductor region 103 are irradiated with beams under the state in which the semiconductor substrate is dipped into a solution including metallic ions having catalytic action, thus selectively forming a first metallic layer 105 having catalytic action onto the first semiconductor region 104 or the second semiconductor region 103. A second metallic layer 106 is shaped onto the first metallic layer 105 through electroless plating. The first metallic layer 105 such as a conductive film 105 in W, etc., is shaped onto the second semiconductor region 103 such as an N-type diffusion layer 103 on the bottom of a contact hole 102 formed to an inter-layer insulating film 101, a catalytic metallic film 107 is shaped onto the conductive film 105 through said method, and the second metallic film 106 such as an electroless plating film 106 is formed.
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