发明名称 MULTILAYER WIRING STRUCTURE, AND SEMICONDUCTOR DEVICE AND WIRING BOARD FORMED THEREWITH
摘要 PURPOSE:To reduce thickness variations of a conductor caused by factors such as non-uniformity of distribution densities of first throughholes, by reducing such non-uniformity by the presence of a second throughhole. CONSTITUTION:A second throughhole 4d, which does not contribute to the electrical connection between first wiring structures 5a to 5c and second wiring structures 3a to 3c, is formed between a first throughhole 4b and a first throughhole 4c, both of whose distribution densities are small, whereby the distribution densities of the first throughholes 4a to 4c are made uniform over the entire surface. In this way, non-uniformity of the distribution densities of the first throughholes within the flat surface of an insulating layer is reduced with the help of the presence of the second throughhole. According to the constitution, even in case of forming a conductive layer which is to be adhered on the insulating layer to form the first wiring structure by means of bias sputtering, thickness variations of such conductive layer caused by non- uniformity of the distribution densities of the first throughholes can be reduced.
申请公布号 JPS6448497(A) 申请公布日期 1989.02.22
申请号 JP19870204016 申请日期 1987.08.19
申请人 HITACHI LTD 发明人 OKUYA KEN
分类号 H01L23/12;H05K3/46 主分类号 H01L23/12
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