A METHOD OF FORMING SOLAR GRADE SILICON SEMICONDUCTOR MATERIAL FROM RELATIVELY LOW PRITY METALLURGICAL GRADE SILICON MATERIAL,申请号IN1986DE11419-传众专利搜索

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发明名称	A METHOD OF FORMING SOLAR GRADE SILICON SEMICONDUCTOR MATERIAL FROM RELATIVELY LOW PRITY METALLURGICAL GRADE SILICON MATERIAL
摘要
申请公布号	IN164439(B)	申请公布日期	1989.03.18
申请号	IN1986DE11419	申请日期	1986.02.10
申请人	TEXAS INSTRUMENTS INCORPORATED	发明人	LEVINE, JULES DAVID;JENSEN, MILLARD JEAN
分类号	C01B;C01B33/02;C30B;(IPC1-7):C01B33/02	主分类号	C01B
代理机构		代理人
主权项
地址

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