| 摘要 |
An exposed positive radiation-sensitive resist film comprising quinone diazide sulphonic acid derivs. and alkali soluble resin, coated on a suitable substrate, is developed to form a surface relief pattern by contacting the exposed film with an aq. alkaline developer soln. contg. at least 0.0001 wt.% of a carboxylated surfactant of formula, R-O-(C2H4O)N-CH2COOX (I) (in which, R is 6-18C linear or branched hydrocarbon, n=1-24, X=H+, Na+, K+ or K+) until the exposed portions of the film are at least partially dissolved. Pref. the developer comprises aq. NaOH or KOH and contains 0.0005-0.5 wt.%, esp. 0.001-0.1% of the (I). Pref. the PH is above about 10.5.
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