| 摘要 |
PURPOSE:To facilitate flattening the etch back surface of wiring material, in spite of existance of recessed parts, by forming a wiring material surface film on an insulating film on a semiconductor substrate, spreading a coating film on the surface of the wiring material film, and etching the coating film and the wiring material film, with a specific liquid. CONSTITUTION:A semiconductor substrate 1 is provided with specified regions 2a, 2b necessary for junctions to Al wiring. An insulating layer 3 on the upper surface of the semiconductor substrate 1 is provided with contact holes 3a, 3b bored on the specified regions 2a, 2b. The contact holes 3a, 3b are covered with a barrier layer 4 like a titanium nitride film. By high temperature sputtering, an Al film 5 is formed on the whole surface so as to fill the contact holes 3a, 3b covered with the barrier layer 4. A resist 6 of low viscosity is spread on the whole surface of the Al film 5. A semiconductor device is dipped in a water solution of tetramethyl guanidine in which the resist 6 and the Al film 5 have the same etching rate. Thereby, the surfaces of the Al films 5A, 5B are flattened independently of diameters of the contact holes 3a, 3b.
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