| 摘要 |
PURPOSE:To contrive to prevent a significant increase in an inverse current by a method wherein the arrangement structure of P-type semiconductor regions is formed in an N-type semiconductor region separated from a Schottky barrier junction surface in such a way that depletion layers due to a P-N junction, which is generated strongly at the time of application of an inverse voltage, are distributed in the N-type semiconductor region. CONSTITUTION:In a Schottky diode consisting of an N-type semiconductor substrate 1, an N-type semiconductor region 2, a Schottky barrier metallic electrode 3, guard rings 4, an insulating film 5 and a metallic electrode 6, P-type semiconductor regions 7 are formed in the region 2 at such intervals that depletion layers due to a P-N junction at the time of application of an inverse voltage are connected mutually and in such a way that the regions 7 are separated from both of the surface of the junction between the electrode 3 and the regions 7 and the surface of the substrate 1 and are arranged in one row between the rings 4. Moreover, each of the regions 7 is connected with the electrode 3 by an Al wiring, a low-resistance diffused layer or an external wiring, for example, on a semiconductor chip and the electrode 3 and the regions 7 are made equipotential to each other. |
