| 摘要 |
PURPOSE:To improve the uniformity of the removal of resist over the surface of a semiconductor substrate by a method wherein a mechanism which rotates a plurality of the semiconductor substrates with the axis of a cylinder as the center of rotation. CONSTITUTION:A vacuum is maintained in a treatment chamber 1 into which semiconductor substrates 8 to be treated are inserted. A radio frequency voltage is applied between electrodes 2a and 2b facing each other with the treatment chamber 1 in the middle. Resist layers applied to a plurality of the substrates 8 arranged along the axis of a cylinder are removed by the excitation or ionization of introduced gas. At that time, a mechanism which rotates a plurality of the substrates 8 with the axis of the cylinder as the center of rotation is provided. While the substrates are subjected to the treatment, a wafer holder 6 in which the substrates 8 are contained is rotated by a driving system 7. With this constitution, the resist layer can be removed from the substrate 8 with a high uniformity regardless to the plasma distribution in the treatment chamber 1. |
