SEMICONDUCTOR DEVICE

摘要

The present invention provides a semiconductor device with an improve performance characteristic. The semiconductor device includes: a field insulation layer on a substrate; a first pin-shaped pattern formed on the substrate and protruding to the upper part than the upper surface of the field insulation layer; and a gate electrode including a first part and a second part and formed on the field insulation layer to cross the first pin-shaped pattern. The first part includes a first longitudinal end of the gate element by being positioned on one side of the first pin-shaped pattern. The second part includes the gate electrode located on the other side of the first pin-shaped pattern. The height from the substrate to a lowermost part of the first part is different from the height from the substrate to the lowermost part of the second part.