GROWTH OF COMPOUND SEMICONDUCTOR THIN-FILM CRYSTAL AND COMPOUND SEMICONDUCTOR DEVICE

摘要

PURPOSE:To place contamination-free and good-quality compound semiconductor thin films side by side inside a place by a method wherein one element out of two or more elements constituting a compound semiconductor thin-film crystal is grown in a temperature atmosphere where an adhesion rate (or a detachment rate) differs from each other on different orientation planes. CONSTITUTION:AlGaAs thin film crystals of different compositions are grown epitaxially on a first orientation plane (a) and a second orientation plane (b); a GaAs substrate crystal 10 having these surfaces are first pasted on a sample stage and guided to a growth chamber. The substrate crystal 10 is heated up to a temperature near 610-620 deg.C inside the growth chamber. Under this temperature condition, molecular beams of Ga, As and Al are directed. Under this temperature condition a first AlGaAs thin film crystal 16 is formed on the first orientation plane (a) and a second AlGaAs thin-film crystal 17 is applied to the second orientation plane (b). A composition of Al in the first AlGaAs thin-film crystal 16 is 0.25 and the composition of Al in the second AlGaAs thin-film crystal 17 is 0.8. By this setup, it is possible to form compound semiconductor thin-film crystals of different compositions inside a plane.