| 摘要 |
PURPOSE:To develop at a time first and second positive resist films by superimposing and applying the second positive type resist film, which is not exposed, on the first positive type resist film after exposing the whole surface of the latter, and selectively exposing both films. CONSTITUTION:A first positive type resist film 12 is formed on a substrate 11 and exposed over the entire surface thereof. A second positive type resist film 13 of the same kind as the first one is superimposed and applied on the first one. Then, those films are selectively irradiated with a light l2 by a projection exposure method to selectively form an optically sensitized region 14 on the second positive type resist film 13. Further, the first and second positive type resist films 12, 13 corresponding to the sensitized region 14 are removed to form an opening 15. With such a construction, upon the second positive type resist film 13 being selectively exposed for forming the opening with use of a development solution, the first positive type resist film 12 is also developed for forming an opening therethrough. |
