| 摘要 |
Polysulfone and polyethersulfone oligomers are made by the condensation of phenols and halogenated moieties and exhibit improved solvent resistance when capped with crosslinkable end cap imidophenols. Composites made with a blend of the oligomers and corresponding polymers formed from the phenols and halogenated moieties, but without end caps, exhibit superior impact resistance while retaining the desired solvent resistance. Conductive or semiconductive oligomers (or their composites) can be formed by doping suitable oligomers, especially those prepared from Schiff base diols.
|
