| 摘要 |
The device is for increasing the memory capacity. An electrode polysilicon (4) is superposed on a thin oxide film (2) separated by a thick oxide film (3) on a substrate (1) to form a capacitor. A silicon layer is superposed by recrystallization of polysilicon on a thick insulator layer (5) to form a MOSFET (7). Drain and polysilicon (4) are filled in a through-hole of the insulator (5) connected with the silicide (6) of high melting point metal, and bit wiring (8) for applying a signal to a source and aluminum word wiring (10) for applying a signal to an electrode (9) are provided.
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