RADIATION DIODE MANUFACTURING METHOD

摘要

The LED formed by metal-organic CVD comprises a double heterojunction of clad layer (13)-active layer (14)-clad layer (15) structure and a current narrowing structure of a metal contact (16) with a surrounding insulating film or reverse junction. The substrate (11) is GaAs in an alternative embodiment, and the structure is formed by a vapour growth method, that is metal organic CVD or molecular beam epitaxy. The n-type clad layers have a greater forbidden bandgap than the active layer.