| 摘要 |
An embodiment of the present invention provides an X-ray mask comprising an electrically conductive layer (9) translucent to X-ray and light beams, a gold layer (12) formed on the electrically conductive layer, of a thickness such as to be translucent to X-ray and light beams, for forming a plating base in combination with the electrically conductive layer, a stencil structure (101, 111), translucent to X-ray and light beams, formed on the electrically conductive layer to a mask pattern for forming a microscopic pattern on a semiconductor wafer, and a gold X-ray absorber (7), plated on the plating base (9, 12), in apertures in the stencil structure. Alignment of the X-ray mask to a semiconductor wafer can be precisely executed using a light beam passing through the stencil structure. |
