发明名称 |
Thin film manufacturing system |
摘要 |
A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.
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申请公布号 |
US4887548(A) |
申请公布日期 |
1989.12.19 |
申请号 |
US19880193680 |
申请日期 |
1988.05.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
URATA, KAZUO;HIROSE, NAOKI;HAYASHI, SHIGENORI |
分类号 |
H01L21/31;C23C16/34;C23C16/48;H01L21/205 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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