发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: To eliminate a disturbing source by providing a voltage stabilization means between a memory gate and a source region and supplying the source region with such a voltage as the size of a voltage packet has no relation to voltage fluctuation at the memory gate. CONSTITUTION: Clock electrodes 5, 6, 7 and 8 are fed with clock voltagesϕs ,ϕ1 ,ϕ2 ,ϕ3 andϕ4 from a clock voltage supply 25. These clock voltages fluctuate between voltages Vss and Vdd . A voltage Vd being fed to an input diode 3 is taken out from the voltage Vdd through a reference voltage supply 26. The voltage Vd is set at such a level as the voltage difference Vdd -Vd has practically no relation to fluctuation of the Vdd and thereby the quantity of charges being stored on the underside of the gate 6 has practically no relation to fluctuation of the Vdd . Consequently, fluctuation of supply voltage has no effect on the size of a charge packet to be formed.
申请公布号 JPH0210866(A) 申请公布日期 1990.01.16
申请号 JP19890084135 申请日期 1989.04.04
申请人 PHILIPS GLOEILAMPENFAB:NV 发明人 ARII SUROOBU
分类号 G11C27/04;G11C11/4074;G11C19/28;H01L21/339;H01L21/8242;H01L27/10;H01L27/108;H01L29/762 主分类号 G11C27/04
代理机构 代理人
主权项
地址