This high voltage linear FET amplifier operates at voltage levels of ten's of thousand's of volts with power dissipation capabilities in the kilowatt range. It is a broadband device which features power amplification from DC to frequencies well in excess of 100 KHz. The amplifier uses a unity-gain inverting amplifier as its basic building block. N-number of these building blocks are stacked to accommodate whatever voltage stand-off level is desired. To operate stacked high voltage amplifiers, it is necessary to provide a bias shift (reference) progressively increasing in equal increments from the ground reference stage to the highest voltage level stage while preserving the fidelity of the signal applied to the first stage. This is done by establishing a phantom ground at all amplifiers for each progressive bias level.
申请公布号
US4897617(A)
申请公布日期
1990.01.30
申请号
US19890318211
申请日期
1989.02.28
申请人
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
发明人
MILBERGER, WALTER E.;JONES, FRANKLIN B.;KERFOOT, CHARLES S.