发明名称 High voltage switch structure with light responsive diode stack
摘要 A light-activated PIN diode switch arrangement is coupled to a source of direct voltage and to a load for control of the flow of load current. The PIN diode switch arrangement is connected so as to be electrically reverse-biased, so that no current flows therethrough. A source of light is coupled to the active portion of the PIN diode switch arrangement for rendering it conductive when flooded with light. High power and low inductance is provided by a configuration in which two PIN diode sets are physically and electrically connected together in a physical and electrical stack by a conductive heat sink. Laser diode arrays above and below the diodes of the stack selectively illuminate the intrinsic region of each diode bath through the adjacent doped region and also directly through the side of the diode.
申请公布号 US4899204(A) 申请公布日期 1990.02.06
申请号 US19870128116 申请日期 1987.12.01
申请人 GENERAL ELECTRIC COMPANY 发明人 ROSEN, HAR'EL;ROSEN, ARYE
分类号 G02B6/42;H01L27/144;H01L31/024;H01L31/105;H01L31/167;H01S5/02;H01S5/40 主分类号 G02B6/42
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