Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision

摘要

An exposure method for use in an apparatus for projecting a pattern formed on a mask onto a photosensitive substrate through a projection optical system, comprises the steps of providing a mask bearing a pattern of which width gradually varies in a reference direction on the mask transferring the pattern onto the photosensitive substrate through the projection optical system measuring the length of pattern transferred onto the photosensitive substrate, in a reference direction on the substrate corresponding to the reference direction of the mask determining optimum exposure conditions for the projection exposure, from thus measured length of the pattern and controlling the exposure according to the conditions.