发明名称 3-STATE CMOS IC
摘要 The complementary MOS integrated circuit comprises an output circuit and a pre-output circuit, which is capable of reducing a penetration current which occurs upon switching of transistors in the output circuit, to thereby suppress an occurrence of spike noises in an output signal. The pre-output circuit comprises MOS transistors constituting an analog switch 'on-resistances' of which are utilised as a resistor, and MOS transistor gates. A series circuit of the analog switch and the gates are coupled in series with a power source.
申请公布号 KR900001810(B1) 申请公布日期 1990.03.24
申请号 KR19870000196 申请日期 1987.01.13
申请人 MITSUBISHI ELECTRIC CO.LTD. 发明人 OKIDAKA DAKENORI;MIYASAWA YUKIO
分类号 H03K19/0175;H03K19/00;H03K19/0948;(IPC1-7):H03K17/60 主分类号 H03K19/0175
代理机构 代理人
主权项
地址