发明名称 CLOCK SIGNAL GENERATOR FOR DYNAMIC SEMICONDUCTOR MEMROY
摘要 An input voltage level control unit converts a transistortransistor- logic drive level to a metal-oxide-semiconductor drive level during transmission of an address strobe signal. An address buffer control unit generates an address signal and an inverted address signal in response to a trailing edge of the address strobe signal. a clock signal generating unit generates a clock signal used for a word line selection and an input signal for a next stage in response to a low level of the address strobe signal, and a further unit inhibits a drive of the word line by the clock signal when the address strobe signal is at high level in the timing of a leading edge of the clock signal.
申请公布号 KR900001806(B1) 申请公布日期 1990.03.24
申请号 KR19860006548 申请日期 1986.08.08
申请人 FUJITSU CO.LTD. 发明人 NOJAKI SIKEKI
分类号 G11C11/407;G11C8/18;G11C11/4076;(IPC1-7):H03K5/135 主分类号 G11C11/407
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