发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A second impurity diffusion layer is formed in a semiconductor substrate at a fixed distance from a first diffusion layer in the substrate. The diffusion layer is supplied with a program potential. An electrode is placed on the channel region between the first and second diffusion layers. Non-selected memory cells are prevented from becoming half-selected by electrically separating the first diffusion layer from the program potential according to signals from the electrode, resulting in substantial improvements in the reliability of the semiconductor device.
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申请公布号 |
US4912534(A) |
申请公布日期 |
1990.03.27 |
申请号 |
US19890394278 |
申请日期 |
1989.08.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA, SUMIO;ATSUMI, SHIGERU;SHIBATA, KENJI;KANZAKI, KOICHI |
分类号 |
H01L21/8247;G11C16/04;H01L27/10;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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