发明名称 Method for sloping the profile of an opening in resist
摘要 A lithography method for forming an opening in a resist layer with a sloped profile is disclosed which requires no additional processing steps or equipment. A scattering element, for example a ground glass diffuser, is placed in the optical path of radiation passing through a standard lithography apparatus. The scattering element modifies the radiation passing through the lithography apparatus with the result that the developed resist profile exhibits sloped edges. The slope modification can be conveniently changed by exchanging the optical scattering element used.
申请公布号 US4912022(A) 申请公布日期 1990.03.27
申请号 US19880290548 申请日期 1988.12.27
申请人 MOTOROLA, INC. 发明人 URQUHART, ANDY;CHAN, KAM-SHUI;ANDERSON, GREGORY D.
分类号 G03F7/20;H01L21/027 主分类号 G03F7/20
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