发明名称 APPARATUS AND METHOD OF CLEAVING THIN LAYER FROM BULK MATERIAL
摘要 Embodiments relate to use of a particle accelerator beam to form thin layers of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise a core of crystalline sapphire (Al2O3) material. Then, a thin layer of the material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. Embodiments may find particular use as hard, scratch-resistant covers for personal electric device displays, or as optical surfaces for fingerprint, eye, or other biometric scanning.
申请公布号 US2016319462(A1) 申请公布日期 2016.11.03
申请号 US201615083664 申请日期 2016.03.29
申请人 Silicon Genesis Corporation 发明人 HENLEY Francois J.
分类号 C30B33/04;H01J37/31;C30B29/20 主分类号 C30B33/04
代理机构 代理人
主权项 1. An apparatus comprising a cleaved single crystal sapphire layer having a thickness of between about 5 μm to about 100 μm.
地址 Santa Clara CA US