| 发明名称 |
ELECTRICAL CHEMICAL PLATING PROCESS |
| 摘要 |
An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure. |
| 申请公布号 |
US2016319450(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201615206321 |
申请日期 |
2016.07.11 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Chun-Ling;Lu Yen-Liang;Hsu Chi-Mao;Lin Chin-Fu;Chen Chun-Hung;Cheng Tsun-Min;Tsai Chi-Ray |
| 分类号 |
C25D5/54;H01L21/768;C25D7/12;H01L21/288;C25D3/38;C25D5/10 |
主分类号 |
C25D5/54 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrical chemical plating process, comprising:
providing a semiconductor structure in an electro-plating machine; providing a pre-electro-plating step, wherein the pre-electro-plating step lasts for 0.2 to 0.5 seconds and a current in the pre-electro-plating step is gradually increased to a maximum value and is substantially maintained at the maximum value; and after the pre-electro-plating step, performing a first-electro-plating step. |
| 地址 |
Hsin-Chu City TW |
