发明名称 Charge duplicator for charge transfer device
摘要 A charge transfer device having a first storage gate above a first storage region and a second storage gate above a second storage region. The charge duplicator has a first charge injector having a first passage gate which introduces, below the first storage gate, the reference charge to be duplicated. A second charge injector having a second passage gate is located near the second storage gate. The first storage gate and second storage gate are connected to the two inputs of a voltage comparator, the output of the voltage comparator being connected to the second passage gate. The charge duplicator has a mechanism which initially is used to apply a reference voltage to the two inputs of the voltage comparator, thereby leaving the two inputs and the gates connected to them in a floating state. The voltage comparator outputs a high level or low level, depending on the value of the differential voltage between its inputs. A very steep transition occurs between the two levels, which is as close to zero as possible.
申请公布号 US4916664(A) 申请公布日期 1990.04.10
申请号 US19890292898 申请日期 1989.01.03
申请人 THOMSON-CSF 发明人 BERGER, JEAN-LUC;ARQUES, MARC
分类号 H04N5/335;G11C19/28;G11C27/04;H01L21/339;H01L29/762 主分类号 H04N5/335
代理机构 代理人
主权项
地址