发明名称 FORMATION OF POSITIVE TYPE ELECTRON BEAM RESIST PATTERN
摘要 PURPOSE:To obtain the positive type resist patterns having high sensitivity and high resolution by using a solvent mixture contg. methyl cellosolve as a developing soln. and a soluble solvent and insoluble solvent for a resist as the resist essentially consisting of a cyclohexyl alpha-cyanoacrylate copolymer. CONSTITUTION:The solvent mixture consisting of >=3 components contg. the methyl cellosolve as the developing soln. and further at least >=1 kinds of the soluble solvent and at least >=1 kinds of the insoluble solvents for the resist is used at the time of developing the positive type resist essentially consisting of the cyclohexyl alpha-cyanoacrylate copolymer expressed by the formula I. The methyl cellosolve is the developing soln. which simultaneously satisfy the high sensitivity and the high resolution. The soluble solvent is mixed therewith in order to shorten the development time thereof. The insoluble solvent is mixed therewith in order to suppress the dissolution in the part irradiated with electron beams. The sensitivity and resolution are improved in this way.
申请公布号 JPH02113256(A) 申请公布日期 1990.04.25
申请号 JP19880267507 申请日期 1988.10.24
申请人 TOPPAN PRINTING CO LTD 发明人 TAMURA AKIRA
分类号 G03F7/039;G03F7/32;H01L21/027;H01L21/30 主分类号 G03F7/039
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