发明名称 Semiconductor radiation coupling system
摘要 A first array of laser diode devices are optically coupled by a diffraction grating comprising a plurality of spaced diffraction nodules in a grid array optically coupled to the devices. The light emitted from a device of the first array can pass through the grid array to a second device, reflect back to the emitting device in a Distributed Bragg Reflector (DBR) mode and deflect orthogonal to the emitted light optical axis to a third device in a Distributed Bragg Deflector (DBD) mode. The light from the second and third devices can be coupled to other laser diode devices by still further diffraction nodule arrays to produce phased-locked beams; beam steering of portions of the light and other effects.
申请公布号 US4919507(A) 申请公布日期 1990.04.24
申请号 US19890349607 申请日期 1989.05.10
申请人 GENERAL ELECTRIC COMPANY 发明人 EVANS, GARY A.;KIRK, JAY B.
分类号 H01S5/00;G02B6/34;H01S5/062;H01S5/125;H01S5/40;H01S5/42 主分类号 H01S5/00
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