| 摘要 |
A temperature sensor having a semiconductor body is disclosed. The semiconductor body includes a substrate of a compound semiconductor and an epitaxial layer of a mixed crystal in which different conduction band minima with different effective masses are energy-wise closely adjacent. A particular embodiment comprises the mixed crystal series gallium-aluminum-arsenic having the composition Ga1-x Alx As, in which the aluminum concentration is 0.2</=x</=0.43. The temperature sensor formed in this manner provides a simplified design and a wide linear temperature range. Additionally, the temperature range is extended without the need for a shunt resistance.
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