PIN JUNCTION PHOTOVOLTAIC ELEMENT WITH P OR N-TYPE SEMICONDUCTOR LAYER COMPRISING NON-SINGLE CRYSTAL MATERIAL CONTAINING ZN, SE, H IN AN AMOUNT OF 1 TO 4 ATOMIC % AND A DOPANT AND I-TYPE SEMICONDUCTOR LAYER COMPRISING NON-SINGLE CRYSTAL SI(H,F) MATERIAL

摘要

An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.