| 摘要 |
PURPOSE:To restrain volatilization of solvent during application, to eliminate absorption of water, and to acquire high moisture resistance and high reliability without blister, bursting, etc., by using application solution using mixture solvent of high boiling point solvent. CONSTITUTION:Application solution which is mainly composed of Si(OC2H5)4 and whose solvent is made by mixing ethyl alcohol and ethyl at a specified mixing ratio is applied onto a substrate 1 which is provided with a plasma chemical vapor growth silicon nitride film 4 on an aluminum wirings 3a, 3b and a glass film 5 is formed. Thus formed flattened two layer aluminum wiring structure avoids any disconnection of aluminum wirings at an opening section 7. Furthermore, heat treatment at a later process ensures elimination of blister, bursting, etc., of an aluminum wiring of the opening section 7. |
