| 摘要 |
PURPOSE: To form a homogeneous silicide film having no roughness by forming a metallic film on an undoped silicon layer after the undoped silicon layer is formed on a doped silicon layer and causing a reaction between the metallic film and the undoped silicon layer in a heat-treating process. CONSTITUTION: After a first conductive material layer is formed of a doped silicon layer 4, a second conductive material layer is formed of an undoped silicon layer 5 on the layer 4. Then a metallic film 9 is formed on the second conductive material layer and a silicide film 10 having a uniform surface state is formed on the first conductive material layer 4 by causing a reaction between the metallic film 9 and the second conductive material layer 5. For example, the first conductive material layer 4 is formed of a polysilicon or amorphous silicon layer doped with an impurity composed of phosphorus or arsenic and the second conductive material layer 5 is formed of an undoped polysilicon or amorphous silicon layer. In addition, the metallic film 9 is formed of titanium.
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