| 摘要 |
PURPOSE:To accelerate the development solubility of resist bottom part, and improve resist pattern form and resolution, by a method wherein, after a positive type resist film is formed on a substrate and exposed, collective exposure is performed during development. CONSTITUTION:A positive type resist 12 is thickly spread and flattened. By using a photo mask, exposure is performed. By development, an exposed part 12a is dissolved and eliminated from the upper part, and collective exposure is performed on the upper surface of a substrate. A layer 12b which is hard to be dissolved is not changed by the collective exposure; photochemical reaction by the light irradiation energy is caused only on the bottom of an aperture part 13A opened by the development; insufficiency of photochemical reaction of the first exposure is compensated. As a result, the development solubility of the resist bottom part is accelerated, the generation of trailing and resist residue are prevented, and pattern precision is improved. |
