| 发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
According to present invention, a semiconductor device includes a semiconductor substrate formed of GaAs, an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate, a barrier layer formed of Co or an alloy containing Co on the adhesion layer, and a metal layer formed of Cu, Ag or Au on the barrier layer. |
| 申请公布号 |
US2016351442(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201415111048 |
申请日期 |
2014.09.17 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NISHIZAWA Koichiro |
| 分类号 |
H01L21/768;H01L23/532;H01L21/8252;H01L23/535;H01L23/522;H01L27/06;H01L23/48 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate formed of GaAs; an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate; a barrier layer formed of Co or an alloy containing Co on the adhesion layer; and a metal layer formed of Cu, Ag or Au on the barrier layer. |
| 地址 |
Tokyo JP |
