发明名称 |
FIELD-EFFECT-TRANSISTOR WITH ASYMMETRICAL STRUCTURE |
摘要 |
FIELD-EFFECT-TRANSISTOR WITH ASYMMETRICAL STRUCTURE A field effect transistor of asymmetrical structure comprises: a semiconductor substrate of first conductivity type; source and drain regions of second conductivity type disposed in a surface of the substrate and spaced apart by a channel region; and a single, lightly doped extension of the drain region into the channel, the extension being of the second conductivity type and of a lower dopant concentration than the drain region. The transistor can further beneficially comprise a halo region of the first conductivity type in the substrate generally surrounding only the source region.
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申请公布号 |
CA2011233(A1) |
申请公布日期 |
1990.12.09 |
申请号 |
CA19902011233 |
申请日期 |
1990.03.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CODELLA, CHRISTOPHER F.;ROVEDO, NIVO;OGURA, SEIKI |
分类号 |
H01L21/28;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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