| 摘要 |
A self-aligned bipolar transistor in which an emitter polysilicon layer is used to align both an extrinsic base region and a deep collector contact. The diffused extrinsic base is separated from the diffused emitter region by an oxide sidewall segment. Doping of the extrinsic base and the emitter is achieved by diffusion from doped overlying polysilicon loayers. The resultant structure is size limited primarily by the metal pitch of the leads.
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