Defect free trench isolation devices and method of fabrication
摘要
The specification discloses an isolation trench (36) formed in a semiconductor body. A stress relief layer (38) of oxide is formed on the interior walls of the trench (36), the layer (38) being sufficiently thin to prevent stressing of the lower corners of the trench (36). A masking layer (40) of nitride is formed over the layer (38). An isolation body (42) of oxide or polysilicon then refills the remainder of the trench and a cap oxide (43) and layer (44) of field oxide is formed over the semiconductor body and the filled trench.
申请公布号
US4983226(A)
申请公布日期
1991.01.08
申请号
US19900494811
申请日期
1990.03.15
申请人
TEXAS INSTRUMENTS, INCORPORATED
发明人
HUNTER, WILLIAM R.;SLAWINSKI, CHRISTOPHER;TENG, CLARENCE W.