Quantum effect semiconductor device

摘要

A quantum effect semiconductor device a channel layer which is substantially a non-doped semiconductor and an n-type (or p-type) carrier supplying layer which is formed on a substrate and having a smaller electron affinity than the channel layer, and an n-type (or p-type) cap layer selectively formed on the carrier supplying layer so that an electron gas layer is formed only at a portion of the channel layer which is immediately under the cap layer.