| 摘要 |
PURPOSE:To form a resist pattern suitable for micro fabrication and superior in diemnsional stability and a profile form by incorporating a specified azomethine compound in a positive type photoresist. CONSTITUTION:The positive type photoresist contains the azomethine compound represented by formula I in which each of R<1> - R<4> is H, halogen, OH, nitro, cyano, 1 - 3 C alkyl or the like, and each may be same or different. The positive type photoresist is not especially limited, and the ones comprising a photosensitive material and a film forming material can be used, thus permitting the dimensional stability and the profile form of the resist pattern to be enhanced to any exposure to light. |
