发明名称 Silicon designs for high voltage isolation
摘要 An isolation system, isolation capacitor, and Integrated Circuit are disclosed. The isolation capacitor is described to include a first capacitive element, a second capacitive element, a primary isolation layer positioned between the first and second capacitive elements, as well as a secondary isolation layer positioned between the first and second capacitive elements. The secondary isolation layer has an area that is larger than an area of one or both of the first and second capacitive elements, thereby reducing the likelihood of breakdown between the first and second capacitive elements.
申请公布号 US9520354(B1) 申请公布日期 2016.12.13
申请号 US201514813110 申请日期 2015.07.29
申请人 Avago Technologies General IP (Singapore) Pte. Ltd. 发明人 Chow Ricky;Ho Dominique;Tao Qian
分类号 H01L23/38;H01L23/522;H01L49/02 主分类号 H01L23/38
代理机构 代理人
主权项 1. An isolation capacitor, comprising: a first capacitive element in electrical communication with a first circuit and having a first area; a second capacitive element in electrical communication with a second circuit that operates at a different voltage than the first circuit, wherein the second capacitive element comprises a second area; a primary isolation layer positioned between the first capacitive element and the second capacitive element, wherein the primary isolation layer substantially prohibits electrical current from flowing between the first capacitive element and second capacitive element; and a secondary isolation layer also positioned between the first capacitive element and the second capacitive element, wherein the secondary isolation layer comprises a third area that is larger than at least one of the first area and second area.
地址 Singapore SG