| 摘要 |
PURPOSE: To obtain a high packing density by arranging a superconductor material film around a word line and preventing a memory cell related to an adjacent word line from being affected by generated magnetic domain. CONSTITUTION: A memory device is formed on a substrate including a layer of a insulation material 10 formed on a base surface 12. The memory device is provided with such plural bit lines 14 as are magnetizable for storing, and an electrically conductive materials 26 which are arranged on the bit lines 14 in parallel with each other and cross the bit lines 14 for forming a matrix of a memory cell 24 each arranged on intersection point between a word line 22 and the bit line 14. This memory device has such plural word lines 22 as are provided with an electrical insulation material 28 arranged around the part not adjacent to the bit line 14 of this conductive material 26 at least, and a film of a superconductor material 30 arranged on that part of the insulation material 28. Thus, the word lines can be arranged very closely to each other and a high packing density is achieved.
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