| 摘要 |
The semiconductor photolithography method for improving the depth of focus (DOF) and the micro pattern by adding the contrast enhancement material (CEM) deposition and strip process comprises the pre-treatment process, deposition of photoresist, soft bake, exposing, post exposure bake and developing process. The CEM and the material for preventing the mixing of the photoresist and the CEM is deposited on photoresist after soft bake processing, followed by exposing and stripping.
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