发明名称 |
Method to integrate HBTs and FETs |
摘要 |
This is a method for fabricating integrated heterojunction bipolar transistors (HBTs) and heterojunction field effect transistors (HFETs) on a substrate. The method comprises: forming a subcollector layer 12 over the substrate 10; forming a collector layer 14 over the subcollector layer; forming a base layer 16 over the collector layer; etching the base layer to form one or more base pedestals 16 over a portion of the collector layer; forming a buffer region 18 in a portion of the collector layer over which one or more HFETs are fabricated; forming one or more channel regions 20,22 over the buffer region; forming a wide bandgap material emitter/gate layer 26 over the base pedestal and the channel region; forming isolation regions 30,32, whereby there is one or more separate HBTs and one or more separate HFETs over the substrate utilizing an epitaxially grown emitter/gate layer to form both an HBT emitter and an HFET gate. Other devices and methods are also disclosed.
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申请公布号 |
US5077231(A) |
申请公布日期 |
1991.12.31 |
申请号 |
US19910670094 |
申请日期 |
1991.03.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PLUMTON, DONALD L.;MORRIS, FRANCIS J.;YANG, JAU-YUANN |
分类号 |
H01L27/06;H01L21/331;H01L21/338;H01L21/76;H01L21/8232;H01L21/8252;H01L27/095;H01L29/205;H01L29/73;H01L29/737;H01L29/778;H01L29/812 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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