| 摘要 |
PURPOSE:To obtain a resin-sealed semiconductor device in which has a reduced inner stress distortion and excellent heat dissipation by employing specific alloy material as a lead frame and a copper-tungsten alloy plate as a heat spreader. CONSTITUTION:A lead frame 12 is adhered to a heat spreader 14 with adhesive 16 at a high temperature in a 2-layer structure, a semiconductor element 18 is placed on the spreader 14 of the frame, wire-bonded and then resin-sealed. 52 alloy (iron-nickel alloy, nickel 50%) is used as the frame 12, and a copper- tungsten alloy plate is used as the spreader 14. The 52 alloy has a strength equivalent to that of 42 alloy. |
