发明名称 ETCHING AND DEVELOPING METHOD
摘要 PURPOSE:To etch or develop the entire surface of a substrate by moving the substrate placed on a conveyor, oscillating a liq. chemical pipeline having a nozzle and an air pipeline having a nozzle and simultaneously injecting the chemical and air. CONSTITUTION:A liq. chemical pipeline 1 having plural nozzles 2 is arranged in plural columns in the traveling direction (to the (a) direction in the figure) of a conveyor 5 for a substrate 4. An air pipeline 6 having nozzles 7 is arranged in plural columns A-F in parallel with the chemical pipeline 1. The chemical pipeline 1 and the air pipeline 6 are oscillated, and the chemical and air are simultaneously injected on the substrate 4 respectively from the nozzles 2 and 7. Consequently, the entire surface of the substrate is uniformly etched or developed.
申请公布号 JPH0448087(A) 申请公布日期 1992.02.18
申请号 JP19900158003 申请日期 1990.06.15
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 ISHIKAWA MASAHARU;KASAI YOSHIHARU;SHIRAKI HIROYUKI;KANEKO JUNJI
分类号 G03F7/30;C23F1/00;C23F1/08;H05K3/06 主分类号 G03F7/30
代理机构 代理人
主权项
地址